Trešdien, 23.maijā plkst. 14.30, Ķengaraga ielā 8, 2.stāva zālē Dr.G.Čikvaidze (LU CFI) „Jauna solārā Si iegūšanas tehnoloģija” un M.Haļitovs, L.Avotiņa (LU maģistranti) „Oglekļa kompozītmateriālu kompleksā analīze”

Dr.G.Čikvaidze (LU CFI) „Jauna solārā Si iegūšanas tehnoloģija” Solar energy is potentially capable of supplying most of the global need for primary energy, and it is expected to become an alternative source for fossil fuels as a clean energy. About 95% of the current solar cell module market is based on solar cells using silicon as raw material, of which about 60% is polycrystalline silicon. The power conversion efficiency of solar cells is largely dependent on impurity levels in the silicon. The present solar silicon production technology uses the so-called trichloristane (THS) method for purification of the raw material. The traditional technology is characteristic of main problems as follows
  • A low reduced silicon layer growth speed (~10µm /min.).
  • High cost of the final product
  • Very dangerous are also the process of gaseous raw materials – trichlorsilane, chlorine, hydrogen, the reactivity of which – corrosive aggressiveness, toxicity and explosion danger raise the price of the reactor building, demand additional security resources for protection of the personnel and the surrounding environment.
A general goal of our Project is increasing of solar silicon production efficiency, decreasing of energy capacity, and exclusion of the ecological pollution factor what allows achieving decreasing of silicon production prime cost. A specific goal of the Project: to establish an innovative silicon processing technology being energy efficient and ecologically harmless. It uses an energy efficient electron beam heating method allowing avoiding of trichlorsilane chemical process application during the course of silicon purification and recrystalization. During the course of Project execution it is necessary to settle tasks as follows:
  • To investigate quartzite reducing process specifics when in the reaction applied are alternative reducing substance nanopowders (for example, SiC or other materials)
  • To experimentally investigate efficient silicon admixtures purification processes by using the electron beam remelting method; to search optimal process methods and conditions in order to minimise the quantity of the processed silicon admixtures
  • To establish a mathematical model and programme modules in order to comprehend and model the many-sided physical processes course during silicon purification, for example, fields of temperature and mechanical pressure, phenomena on solid- liquid phase boundary surface, the course of crystallization, etc.
  M.Haļitovs, L.Avotiņa (LU maģistranti) „Oglekļa kompozītmateriālu kompleksā analīze” Oglekļa kompozītmateriāli ir viens no nozīmīgākajiem materiāliem kodolsintēzes reaktoru izstrādē un darbībā. Tie tiek izmantoti konstrukcijas elementu aizsardzībai no plazmas, temperatūras un radioaktīvo materiālu iedarbības mazināšanai, galvenokārt, vakuumkameras divertora konstrukcijā. LU ĶFI Cietvielu radiācijas ķīmijas laboratorijā sadarbībā ar citām LU pētniecības iestādēm tiek pētīti materiāli pēcekspluatācijas periodā, nosakot tajos akumulētā tritija daudzumu un akumulētās formas (pilnīga oksidēšana, TG-DTA, termodifūzija, šķidrā scintilācija), struktūras izmaiņas (SEM, FT-IR, rentgendifraktometrija) kā arī akumulētā tritija izdalīšanos dažādu ārējo faktoru ietekmē (temperatūra, magnētiskais lauks, jonizējošais starojums). Materiālu kompleksā analīze ļauj daudz efektīvāk skaidrot pētījumos iegūtos rezultātus un meklēt likumsakarības starp tiem.  

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